Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes

The mechanisms of reverse leakage in InGaN&#x002F;GaN multiple-quantum-wells (MQWs) blue and green light-emitting diodes (LEDs) were studied through analyzing the current&#x2013;voltage (<italic>I&#x2013;V</italic>) characteristics with the temperature ranging from 50 to 350...

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Bibliographic Details

Published in:	IEEE Photonics Journal
Main Authors:	Ting Zhi, Tao Tao, Bin Liu, Zili Xie, Peng Chen, Rong Zhang
Format:	Article
Language:	English
Published:	IEEE 2016-01-01
Subjects:	GaN-based light-emitting diodes (LEDs) multiple quantum wells (MQWs) (I–V) current-voltage characteristics reverse leakage current
Online Access:	https://ieeexplore.ieee.org/document/7543527/