Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing

Enhancement-mode 4H-SiC MOSFETs utilising an aluminium oxide (Al<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math>&l...

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Bibliographic Details
Published in:Crystals
Main Authors: Muhammad Idzdihar Idris, Alton Horsfall
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Subjects:
high-κ
4H-SiC MOSFET
high mobility
surface reconstruction
surface treatment
trap density
Online Access:https://www.mdpi.com/2073-4352/12/8/1111

Internet

https://www.mdpi.com/2073-4352/12/8/1111

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