Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs

The ability of Ultra-Thin-Body (UTB) MOS devices to enable channel length scaling can only be realistically assessed by accurately taking key physical effects such as Quantum Confinement effects (QCEs) and Short channel effects (SCEs) into account. QCEs can accurately be considered only through a fu...

Full description

Bibliographic Details

Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	Nalin Vilochan Mishra, Aditya Sankar Medury
Format:	Article
Language:	English
Published:	IEEE 2024-01-01
Subjects:	UTB device simulation band structure electrostatics SDT current scattering
Online Access:	https://ieeexplore.ieee.org/document/10697110/