Low power multilevel resistive switching in titanium oxide-based RRAM devices by interface engineering
The stochastic nature of conductive filament formation and dissolution always leads to large fluctuations of key device parameters that hinder the practical applications of resistive random-access memories (RRAMs). Here, we report a simple bilayer oxide-based device structure of Al/TiOx/TiOy/FTO (x ...
| 发表在: | Journal of Science: Advanced Materials and Devices |
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| Main Authors: | , |
| 格式: | 文件 |
| 语言: | 英语 |
| 出版: |
Elsevier
2021-12-01
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| 主题: | |
| 在线阅读: | http://www.sciencedirect.com/science/article/pii/S2468217921000654 |