Low power multilevel resistive switching in titanium oxide-based RRAM devices by interface engineering

The stochastic nature of conductive filament formation and dissolution always leads to large fluctuations of key device parameters that hinder the practical applications of resistive random-access memories (RRAMs). Here, we report a simple bilayer oxide-based device structure of Al/TiOx/TiOy/FTO (x ...

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Bibliographic Details
Published in:	Journal of Science: Advanced Materials and Devices
Main Authors:	S.P. Swathi, S. Angappane
Format:	Article
Language:	English
Published:	Elsevier 2021-12-01
Subjects:	Multilevel resistive switching Titanium oxide Bilayer Oxygen vacancy Interface engineering Gibb's free energy
Online Access:	http://www.sciencedirect.com/science/article/pii/S2468217921000654

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