Remaining Useful Lifetime Prediction of Discrete Power Devices by Means of Artificial Neural Networks

This work proposes a deep learning-based model for predicting the lifetime of power devices subjected to power cycling. To this purpose, a neural network based on bidirectional long short-term memory is adopted. The neural network is trained with experimental on-voltage degradation profiles. The app...

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Bibliographic Details

Published in:	IEEE Open Journal of Power Electronics
Main Authors:	Alessandro Vaccaro, Davide Biadene, Paolo Magnone
Format:	Article
Language:	English
Published:	IEEE 2023-01-01
Subjects:	Power cycling IGBT semiconductor power device reliability remaining useful lifetime artificial neural network
Online Access:	https://ieeexplore.ieee.org/document/10315015/