Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder

FinFET at 32 nm and beyond is an emerging transistor technology offer interesting delay–power tradeoff. FinFETs are a necessary step in the evolution of semiconductors because bulk CMOS has difficulties in scaling beyond 32 nm. Use of the back gate leads to very interesting design opportunities....

Full description

Bibliographic Details

Published in:	Журнал нано- та електронної фізики
Main Authors:	S. Rashid, S. Khan, A. Singh
Format:	Article
Language:	English
Published:	Sumy State University 2017-10-01
Subjects:	FinFET MOSFET ADDER 32В nm Technology Power Spee
Online Access:	http://jnep.sumdu.edu.ua:8080/download/numbers/2017/5/articles/Proof_JNEP_05003.pdf