3 300 V IGBT / FRD Chipset Design and Development for Traction Application

According to the IGBT characteristics and requirements for traction application, the simulation technique was used on the termination structure design to improve the blocking voltage. The terraced gate structure was developed to increase the switching speed, by adopting the carrier injection efficie...

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Bibliographic Details

Published in:	机车电传动
Main Authors:	LIU Guo-you, QIN Rong-zhen, Ian Deviny, HUANG Jian-wei
Format:	Article
Language:	Chinese
Published:	Editorial Department of Electric Drive for Locomotives 2013-01-01
Subjects:	insulated gate bipolar transistor (IGBT) rail transit termination structure terraced gate injection efficiency cell
Online Access:	http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2013.02.002