3 300 V IGBT / FRD Chipset Design and Development for Traction Application

• Published in: 机车电传动
• Main Authors: LIU Guo-you, QIN Rong-zhen, Ian Deviny, HUANG Jian-wei
• Format: Article
• Language: Chinese
• Published: Editorial Department of Electric Drive for Locomotives 2013-01-01
• Subjects: insulated gate bipolar transistor (IGBT); rail transit; termination structure; terraced gate; injection efficiency; cell
• Online Access: http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2013.02.002

According to the IGBT characteristics and requirements for traction application, the simulation technique was used on the termination structure design to improve the blocking voltage. The terraced gate structure was developed to increase the switching speed, by adopting the carrier injection efficiency to realize a trade off between on state loss and turn off energy to reduce the total IGBT loss. The advanced cell structure design technique was adopted to optimize the short circuit capability to enhance the reliability. The ’super low P emitter’ was developed to get rid of the local lifetime control to reduce the FRD reverse leakage current. A 3 300 V IGBT/FRD had been developed, which could meet the requirements for traction application.