Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

<p>Abstract</p> <p>We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force m...

Full description

Bibliographic Details

Published in:	Nanoscale Research Letters
Main Authors:	Hakkarainen Teemu, Schramm Andreas, Tukiainen Antti, Ahorinta Risto, Toikkanen Lauri, Guina Mircea
Format:	Article
Language:	English
Published:	SpringerOpen 2010-01-01
Subjects:	Molecular beam epitaxy III-V semiconductors Quantum dots Ordering InAs GaInP
Online Access:	http://dx.doi.org/10.1007/s11671-010-9747-2