New Super-Junction LDMOS Based on Poly-Si Thin-Film Transistors
A multi-channel super-junction lateral doubled-diffused MOSFET (SJ-LDMOS) that is developed from thin film transistor technology is proposed. To optimize the breakdown voltage (VBD) and to reduce the specific on-resistance (R<sub>SP</sub>), a new structure called REC-SJ LDMOS, with two s...
| Published in: | IEEE Journal of the Electron Devices Society |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7543503/ |