New Super-Junction LDMOS Based on Poly-Si Thin-Film Transistors

A multi-channel super-junction lateral doubled-diffused MOSFET (SJ-LDMOS) that is developed from thin film transistor technology is proposed. To optimize the breakdown voltage (VBD) and to reduce the specific on-resistance (R<sub>SP</sub>), a new structure called REC-SJ LDMOS, with two s...

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Bibliographic Details
Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	Jhen-Yu Tsai, Hsin-Hui Hu
Format:	Article
Language:	English
Published:	IEEE 2016-01-01
Subjects:	High-voltage TFT (HVTFT) lateral doubled-diffused MOSFET (LDMOS) super-junction (SJ)
Online Access:	https://ieeexplore.ieee.org/document/7543503/

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