Effect of interface roughness on Auger recombination in semiconductor quantum wells
Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable...
| Published in: | AIP Advances |
|---|---|
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-03-01
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| Online Access: | http://dx.doi.org/10.1063/1.4978777 |