Effect of interface roughness on Auger recombination in semiconductor quantum wells

Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable...

書目詳細資料
發表在:	AIP Advances
Main Authors:	Chee-Keong Tan, Wei Sun, Jonathan J. Wierer Jr., Nelson Tansu
格式:	Article
語言:	英语
出版:	AIP Publishing LLC 2017-03-01
在線閱讀:	http://dx.doi.org/10.1063/1.4978777

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