INCREASING RADIATION RESISTANCE OF MEMORY DEVICES BASED ON AMORPHOUS SEMICONDUCTORS

A memory cell structure is proposed that uses a Schottky barrier thin film transistor based on an amorphous semiconductor as a junction element, and a chalcogenide glassy semiconductor film as a switching element. A physical storage cell model has been developed. The dependence of the transistor and...

Full description

Bibliographic Details

Published in:	Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
Main Authors:	Vasyl Kychak, Ivan Slobodian, Victor Vovk
Format:	Article
Language:	English
Published:	Lublin University of Technology 2020-09-01
Subjects:	amorphous semiconductor chalcogenide glassy semiconductors radiation resistance memory cell
Online Access:	https://ph.pollub.pl/index.php/iapgos/article/view/2081