Lateral NiO/AlN Heterojunction Rectifiers with Breakdown Voltage >11 kV

Lateral NiO/AIN heterojunction diodes (HJDs) with breakdown voltage up to 11.6 kV and Ni/Au/AlN Schottky barrier diodes (SBDs) with V _B of 8.6 kV were fabricated on layers grown on sapphire substrates by metalorganic chemical vapor phase deposition. The power figure-of-merits V _B ^2 /R _ON where R...

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Bibliographic Details

Published in:	ECS Advances
Main Authors:	Hsiao-Hsuan Wan, Jian-Sian Li, Chiao-Ching Chiang, Md Hafijur Rahman, Aman Haque, Fan Ren, Stephen J. Pearton
Format:	Article
Language:	English
Published:	IOP Publishing 2024-01-01
Subjects:	AlN heterojunction rectifier high breakdown voltage
Online Access:	https://doi.org/10.1149/2754-2734/ad7867