Study of the Characteristics of Ba<sub>0.6</sub>Sr<sub>0.4</sub>Ti<sub>1-x</sub>Mn<sub>x</sub>O<sub>3</sub>-Film Resistance Random Access Memory Devices

In this study, Ba<sub>0.6</sub>Sr<sub>0.4</sub>Ti<sub>1-x</sub>Mn<sub>x</sub>O<sub>3</sub> ceramics were fabricated by a novel ball milling technique followed by spin-coating to produce thin-film resistive memories. Measurements were made u...

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Bibliographic Details
Published in:Micromachines
Main Authors: Kai-Huang Chen, Chien-Min Cheng, Ming-Cheng Kao, Yun-Han Kao, Shen-Feng Lin
Format: Article
Language:English
Published: MDPI AG 2024-09-01
Subjects:
conduction mechanism
BaSrTiMnO<sub>3</sub>
resistance random access memory
electronic hopping distance
Online Access:https://www.mdpi.com/2072-666X/15/9/1143

Internet

https://www.mdpi.com/2072-666X/15/9/1143

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