Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Abstract Ultra-silicon-rich nitride with refractive indices ~ 3 possesses high nonlinear refractive index—100× higher than stoichiometric silicon nitride and presents absence of two-photon absorption, making it attractive to be used in nonlinear integrated optics at telecommunications wavelengths. D...

詳細記述

書誌詳細
出版年:Scientific Reports
主要な著者: Doris K. T. Ng, Hongwei Gao, Peng Xing, George F. R. Chen, Xavier X. Chia, Yanmei Cao, Kenny Y. K. Ong, Dawn T. H. Tan
フォーマット: 論文
言語:英語
出版事項: Nature Portfolio 2022-03-01
オンライン・アクセス:https://doi.org/10.1038/s41598-022-09227-4