Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions
4H-SiC is a pivotal semiconductor for high-power, high-temperature devices, where Auger recombination significantly affects performance under high carrier injection. While previously studied in lightly doped material, data for heavily doped n-type 4H-SiC remain scarce under high injection levels. Th...
| Published in: | Applied Physics Express |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adfef4 |