| Summary: | 4H-SiC is a pivotal semiconductor for high-power, high-temperature devices, where Auger recombination significantly affects performance under high carrier injection. While previously studied in lightly doped material, data for heavily doped n-type 4H-SiC remain scarce under high injection levels. This work investigates the Auger recombination coefficient ( C ) in heavily nitrogen-doped 4H-SiC via a time-resolved photoluminescence method across varied carrier concentrations and temperatures. Results show faster decay with increasing excitation and temperature, confirming the dominance of Auger recombination. The coefficient follows $C\propto {T}^{1.19}$ , increasing from 3.0 × 10 ^−31 cm ^6 s ^–1 at room temperature due to phonon interactions. These insights aid the design of high-efficiency SiC power devices.
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