Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions
4H-SiC is a pivotal semiconductor for high-power, high-temperature devices, where Auger recombination significantly affects performance under high carrier injection. While previously studied in lightly doped material, data for heavily doped n-type 4H-SiC remain scarce under high injection levels. Th...
| الحاوية / القاعدة: | Applied Physics Express |
|---|---|
| المؤلفون الرئيسيون: | , , |
| التنسيق: | مقال |
| اللغة: | الإنجليزية |
| منشور في: |
IOP Publishing
2025-01-01
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://doi.org/10.35848/1882-0786/adfef4 |
| _version_ | 1849286932082720768 |
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| author | Endong Zhang Hiroko Matsuyama Masashi Kato |
| author_facet | Endong Zhang Hiroko Matsuyama Masashi Kato |
| author_sort | Endong Zhang |
| collection | DOAJ |
| container_title | Applied Physics Express |
| description | 4H-SiC is a pivotal semiconductor for high-power, high-temperature devices, where Auger recombination significantly affects performance under high carrier injection. While previously studied in lightly doped material, data for heavily doped n-type 4H-SiC remain scarce under high injection levels. This work investigates the Auger recombination coefficient ( C ) in heavily nitrogen-doped 4H-SiC via a time-resolved photoluminescence method across varied carrier concentrations and temperatures. Results show faster decay with increasing excitation and temperature, confirming the dominance of Auger recombination. The coefficient follows $C\propto {T}^{1.19}$ , increasing from 3.0 × 10 ^−31 cm ^6 s ^–1 at room temperature due to phonon interactions. These insights aid the design of high-efficiency SiC power devices. |
| format | Article |
| id | doaj-art-ee654767b856489cacd747768014277c |
| institution | Directory of Open Access Journals |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| spelling | doaj-art-ee654767b856489cacd747768014277c2025-09-11T10:28:52ZengIOP PublishingApplied Physics Express1882-07862025-01-0118909100110.35848/1882-0786/adfef4Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditionsEndong Zhang0https://orcid.org/0000-0002-7843-7283Hiroko Matsuyama1Masashi Kato2https://orcid.org/0000-0002-2921-709XDepartment of Electrical and Mechanical Engineering, Nagoya Institute of Technology , Gokiso, Showa, Nagoya, 466-8555, JapanDepartment of Electrical and Mechanical Engineering, Nagoya Institute of Technology , Gokiso, Showa, Nagoya, 466-8555, JapanDepartment of Electrical and Mechanical Engineering, Nagoya Institute of Technology , Gokiso, Showa, Nagoya, 466-8555, Japan4H-SiC is a pivotal semiconductor for high-power, high-temperature devices, where Auger recombination significantly affects performance under high carrier injection. While previously studied in lightly doped material, data for heavily doped n-type 4H-SiC remain scarce under high injection levels. This work investigates the Auger recombination coefficient ( C ) in heavily nitrogen-doped 4H-SiC via a time-resolved photoluminescence method across varied carrier concentrations and temperatures. Results show faster decay with increasing excitation and temperature, confirming the dominance of Auger recombination. The coefficient follows $C\propto {T}^{1.19}$ , increasing from 3.0 × 10 ^−31 cm ^6 s ^–1 at room temperature due to phonon interactions. These insights aid the design of high-efficiency SiC power devices.https://doi.org/10.35848/1882-0786/adfef4SiCAuger recombination coefficientheavily dopinghigh injection level |
| spellingShingle | Endong Zhang Hiroko Matsuyama Masashi Kato Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions SiC Auger recombination coefficient heavily doping high injection level |
| title | Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions |
| title_full | Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions |
| title_fullStr | Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions |
| title_full_unstemmed | Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions |
| title_short | Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions |
| title_sort | auger recombination coefficient in heavily nitrogen doped 4h sic under high level injection conditions |
| topic | SiC Auger recombination coefficient heavily doping high injection level |
| url | https://doi.org/10.35848/1882-0786/adfef4 |
| work_keys_str_mv | AT endongzhang augerrecombinationcoefficientinheavilynitrogendoped4hsicunderhighlevelinjectionconditions AT hirokomatsuyama augerrecombinationcoefficientinheavilynitrogendoped4hsicunderhighlevelinjectionconditions AT masashikato augerrecombinationcoefficientinheavilynitrogendoped4hsicunderhighlevelinjectionconditions |