Doping-Less Feedback Field-Effect Transistors

In this study, we propose doping-less feedback field-effect transistors (DLFBFETs). Our DLFBFETs are 5 nm thick intrinsic semiconductor bodies with dual gates. Usually, DLFBFETs are virtually doped through charge plasma phenomena caused by the source, the drain, and the dual-gate electrodes as well...

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Bibliographic Details

Published in:	Micromachines
Main Authors:	Hakin Kim, Doohyeok Lim
Format:	Article
Language:	English
Published:	MDPI AG 2024-02-01
Subjects:	doping-less device feedback field-effect transistor charge plasma
Online Access:	https://www.mdpi.com/2072-666X/15/3/316