Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure

Abstract Depending on the mobile species involved in the resistive switching process, redox random access memories and conductive bridge random access memories are widely studied with distinct switching mechanisms. Although the two resistance switching types have faithfully proved to be electrochemi...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:Advanced Science
المؤلفون الرئيسيون: Xiaoli Chen, Kelin Zeng, Xin Zhu, Guanglong Ding, Ting Zou, Chen Zhang, Kui Zhou, Ye Zhou, Su‐Ting Han
التنسيق: مقال
اللغة:الإنجليزية
منشور في: Wiley 2019-06-01
الموضوعات:
graphene
heterostructures
homojunctions
negative differential resistance
titanium oxide
الوصول للمادة أونلاين:https://doi.org/10.1002/advs.201900213

الانترنت

https://doi.org/10.1002/advs.201900213

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