Shallow carrier traps in hydrothermal ZnO crystals

Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy, photoluminescence and cathodoluminescence microanalysis. The as-grown ZnO exhibits a trap state at 23 meV, while H-doped ZnO produced by pla...

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發表在:	New Journal of Physics
Main Authors:	C Ton-That, L L C Lem, M R Phillips, F Reisdorffer, J Mevellec, T-P Nguyen, C Nenstiel, A Hoffmann
格式:	Article
語言:	英语
出版:	IOP Publishing 2014-01-01
主題:	ZnO DLTS cathodoluminescence
在線閱讀:	https://doi.org/10.1088/1367-2630/16/8/083040