All-Water-Driven High-k HfO₂ Gate Dielectrics and Applications in Thin Film Transistors

In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the In₂O₃/HfO₂ thin film transistor (TFT). All the electrica...

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書誌詳細

出版年:	Nanomaterials
主要な著者:	Fakhari Alam, Gang He, Jin Yan, Wenhao Wang
フォーマット:	論文
言語:	英語
出版事項:	MDPI AG 2023-02-01
主題:	high-k sol-gel thin-film transistors (TFTs) water-driven (WD) routine HfO<sub>2</sub> thin films
オンライン･アクセス:	https://www.mdpi.com/2079-4991/13/4/694