| الملخص: | In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the In<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> thin film transistor (TFT). All the electrical properties of In<sub>2</sub>O<sub>3</sub> based on HfO<sub>2</sub> were systematically analyzed. The In<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> device exhibits the best electrical performance at an optimized annealing temperature of 500 °C, including a high µ<sub>FE</sub> of 9 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, a high I<sub>ON</sub>/I<sub>OFF</sub> of 10<sup>5</sup>, a low threshold voltage of 1.1 V, and a low sub-threshold of 0.31 V dec<sup>−1</sup>. Finally, test the stability of the bias under positive bias stress (PBS) and negative bias stress (NBS) with threshold shifts (V<sub>TH</sub>) of 0.35 and 0.13 V while these optimized properties are achieved at a small operating voltage of 2 V. All experimental results demonstrate the potential application of aqueous solution technology for future low-cost, energy-efficient, large-scale, and high-performance electronics.
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