Reversing A Decades‐Long Scaling Law of Dielectric Breakdown using Hydrogen‐Plasma‐Treated HfO2 ReRAM Devices

Abstract Dielectric breakdown (BD) is known to cause component failure in electronic devices and high‐voltage power lines over many decades. In recent years, this failure mechanism has been exploited to intentionally form nanoscale filaments in resistive random‐access‐memory (ReRAM) devices for arti...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Ernest Y. Wu, Takashi Ando, Paul Jamison
Format:	Article
Language:	English
Published:	Wiley-VCH 2023-10-01
Subjects:	dielectric breakdown forming voltage ReRAM statistics TDDB reversing BD area scaling
Online Access:	https://doi.org/10.1002/aelm.202300296