Multistep Soft Turn-Off Time Control to Suppress the Overvoltage of SiC MOSFETs in Short-Circuit State
Wide-bandgap (WBG) devices, such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) FETs, have replaced silicon insulated gate bipolar transistors (Si-IGBTs) in recent years, because WBG devices can achieve fast switching frequencies and improved temperature variation reliability with better...
| Published in: | IEEE Access |
|---|---|
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9762271/ |
