Multistep Soft Turn-Off Time Control to Suppress the Overvoltage of SiC MOSFETs in Short-Circuit State

Wide-bandgap (WBG) devices, such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) FETs, have replaced silicon insulated gate bipolar transistors (Si-IGBTs) in recent years, because WBG devices can achieve fast switching frequencies and improved temperature variation reliability with better...

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Bibliographic Details
Published in:IEEE Access
Main Authors: Minseob Shim, Kyoungho Lee, Jonghyun Kim, Kihyun Kim
Format: Article
Language:English
Published: IEEE 2022-01-01
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9762271/