Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

The study aimed at the investigation and application of SnS thin film semiconductor as a channel layer semiconductor in the assembly of an electric double layer field effect transistor which is important for the achievement and development of novel device concepts, applications and tuning of physica...

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Bibliographic Details

Published in:	East European Journal of Physics
Main Authors:	Thomas Daniel, Uno Uno, Kasim Isah, Umaru Ahmadu
Format:	Article
Language:	English
Published:	V.N. Karazin Kharkiv National University Publishing 2019-10-01
Subjects:	SnS thin film Field effect transistor Honey Electric double layer
Online Access:	https://periodicals.karazin.ua/eejp/article/view/14363