Morphology change of the silicon surface induced by Ar<sup>+</sup> ion beam sputtering

Two-level modeling for nanoscale pattern formation on silicon target by Ar<sup>+</sup> ion sputtering is presented. Phase diagram illustrating possible nanosize surface patterns is discussed. Scaling characteristics for the structure wavelength dependence versus incoming ion energy are d...

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Bibliographic Details
Published in:Condensed Matter Physics
Main Authors: D.O. Kharchenko, V.O. Kharchenko
Format: Article
Language:English
Published: Yukhnovskii Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine 2011-06-01
Subjects:
ion-beam sputtering
surface morphology
nanoscale structures
Online Access:http://dx.doi.org/10.5488/CMP.14.23602
Description
Summary:Two-level modeling for nanoscale pattern formation on silicon target by Ar<sup>+</sup> ion sputtering is presented. Phase diagram illustrating possible nanosize surface patterns is discussed. Scaling characteristics for the structure wavelength dependence versus incoming ion energy are defined. Growth and roughness exponents in different domains of the phase diagram are obtained.
ISSN:1607-324X

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