ON THE SPECIFIC FEATURES OF SILICON CARBIDE HETEROPOLYTYPE EPITAXY

Specific features of silicon carbide layer formation with the structure (polytype) different from the SiC-substrate structure (polytype) are considered. Simple theoretical foundations of the nonstoichiometric character, impurities, C- and Si-faces effect on the heteropolytype epitaxy (HPE) of silico...

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Bibliographic Details

Published in:	Научно-технический вестник информационных технологий, механики и оптики
Main Authors:	S. Y. Davydov, A. A. Lebedev, A. S. Usikov
Format:	Article
Language:	English
Published:	ITMO University 2015-07-01
Subjects:	silicon carbide heteropolytype epitaxy transition layers spinodal decomposition
Online Access:	http://ntv.ifmo.ru/file/article/13680.pdf