Thermoelectric Coefficients Of Heavily Doped N-Type Silicon
In this study the thermoelectric effect is investigated in terms of thermoelectric power, Figure of merit(ZT), and power factor. The calculations were carried out based on Boltzmann transport equation by taking ionized impurity scattering as a dominant mechanism for heavily doped n-type silicon at 3...
| Published in: | East European Journal of Physics |
|---|---|
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
V.N. Karazin Kharkiv National University Publishing
2021-12-01
|
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/18147 |