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Simon Sze

Simon Min Sze, or Shi Min (; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967. Provided by Wikipedia

21

Study of Hydrogen Silsesquioxane ( HSQ ) - A Low Dielectric Constant Material

by Chang Chien-Fu, 張虔輔
Published 2000
Other Authors: “...Simon M. Sze...”

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22

Study of Hybrid-Organic-Siloxane-Polymer (HOSP) - A Low Dielectric Constant Material for ULSI Applications

by Hsing Su, 蘇醒
Published 2000
Other Authors: “...Simon M. Sze...”

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23

Study on IC Process Integration of Low-Dielectric-Constant Materials

by Yi-Shien Mor, 莫亦先
Published 2002
Other Authors: “...Simon M. Sze...”

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24

Study on Integration of Porous Low Dielectric Constant Material

by Chun-Huai Li, 李純懷
Published 2001
Other Authors: “...Simon M. Sze...”

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25

Study on Nano-Scaled Poly-Si Thin-Film Transistor with Stacked Gate Dielectric

by Chia-Chou Tsai, 蔡佳州
Published 2006
Other Authors: “...Simon M. Sze...”

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26

Study on Siloxane Based Low dielectric Constant Materials

by Chien-Fu Tang, 唐健夫
Published 2001
Other Authors: “...Dr.Simon M.Sze...”

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27

Fabrication and Characterization of Metal-induced Lateral Crystallization Polysilicon Thin-film Transistor with Multi-channel and Multi-gate

by Chou,Cheng-Wei, 周政偉
Published 2005
Other Authors: “...Prof. Simon M. Sze...”

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