Filtering Characteristics of Phonon Polaritons Waves Based on Dielectric-h-BN-Dielectric Structure in Mid-Infrared Band

Hyperbolic materials can be used to excite hyperbolic phonon polaritons in specific frequency bands, which causes abrupt interfaces with fluctuations of permittivity and different transmission characteristics at different incident wavelengths. Using the quasi-static approximation, the filtering char...

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Main Authors: Ming Cai, Shulong Wang, Zhihong Liu, Yindi Wang, Tao Han, Hongxia Liu
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/10/5/878
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spelling doaj-03c0719e48e848a9b78bcbf6e5a62c792020-11-25T03:00:40ZengMDPI AGNanomaterials2079-49912020-05-011087887810.3390/nano10050878Filtering Characteristics of Phonon Polaritons Waves Based on Dielectric-h-BN-Dielectric Structure in Mid-Infrared BandMing Cai0Shulong Wang1Zhihong Liu2Yindi Wang3Tao Han4Hongxia Liu5Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaHyperbolic materials can be used to excite hyperbolic phonon polaritons in specific frequency bands, which causes abrupt interfaces with fluctuations of permittivity and different transmission characteristics at different incident wavelengths. Using the quasi-static approximation, the filtering characteristics of hexagonal Boron nitride (h-BN) and the transmission characteristics of phonon polaritons waves on a dielectric-h-BN-dielectric structure were studied in the paper. The results show that a smaller relative permittivity of the materials above and below h-BN and a thicker h-BN (ε<sub>1</sub> = 1 (air), ε<sub>2</sub> = 3.9 (SiO<sub>2</sub>), d = 100 nm) will lead to better filtering characteristics for different wavenumbers’ incident waves (propagation length from 0.0028 μm to 1.9756 μm). Simulation results in COMSOL validated the previous theoretical calculations. Moreover, the transmissivity and 3dB bandwidth of the type-II band were calculated with different structure widths. The maximum transmissivity of ~99% appears at a width of 100 nm, and the minimum 3dB bandwidth reaches 86.35 cm<sup>−1</sup> at a structure width of 1300 nm. When the structure width meets or exceeds 1700 nm, the 3dB bandwidth is equal to 0, and its structure length is the limit for the filter application. These characteristics reveal the excellent filtering characteristics of the dielectric-h-BN-dielectric structure, and reveal the great potential of using the dielectric-h-BN-dielectric structure to design optical filter devices with excellent performance in mid-infrared bands.https://www.mdpi.com/2079-4991/10/5/878phonon plaritonsfiltering characteristicsh-BNmid-infrared band
collection DOAJ
language English
format Article
sources DOAJ
author Ming Cai
Shulong Wang
Zhihong Liu
Yindi Wang
Tao Han
Hongxia Liu
spellingShingle Ming Cai
Shulong Wang
Zhihong Liu
Yindi Wang
Tao Han
Hongxia Liu
Filtering Characteristics of Phonon Polaritons Waves Based on Dielectric-h-BN-Dielectric Structure in Mid-Infrared Band
Nanomaterials
phonon plaritons
filtering characteristics
h-BN
mid-infrared band
author_facet Ming Cai
Shulong Wang
Zhihong Liu
Yindi Wang
Tao Han
Hongxia Liu
author_sort Ming Cai
title Filtering Characteristics of Phonon Polaritons Waves Based on Dielectric-h-BN-Dielectric Structure in Mid-Infrared Band
title_short Filtering Characteristics of Phonon Polaritons Waves Based on Dielectric-h-BN-Dielectric Structure in Mid-Infrared Band
title_full Filtering Characteristics of Phonon Polaritons Waves Based on Dielectric-h-BN-Dielectric Structure in Mid-Infrared Band
title_fullStr Filtering Characteristics of Phonon Polaritons Waves Based on Dielectric-h-BN-Dielectric Structure in Mid-Infrared Band
title_full_unstemmed Filtering Characteristics of Phonon Polaritons Waves Based on Dielectric-h-BN-Dielectric Structure in Mid-Infrared Band
title_sort filtering characteristics of phonon polaritons waves based on dielectric-h-bn-dielectric structure in mid-infrared band
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2020-05-01
description Hyperbolic materials can be used to excite hyperbolic phonon polaritons in specific frequency bands, which causes abrupt interfaces with fluctuations of permittivity and different transmission characteristics at different incident wavelengths. Using the quasi-static approximation, the filtering characteristics of hexagonal Boron nitride (h-BN) and the transmission characteristics of phonon polaritons waves on a dielectric-h-BN-dielectric structure were studied in the paper. The results show that a smaller relative permittivity of the materials above and below h-BN and a thicker h-BN (ε<sub>1</sub> = 1 (air), ε<sub>2</sub> = 3.9 (SiO<sub>2</sub>), d = 100 nm) will lead to better filtering characteristics for different wavenumbers’ incident waves (propagation length from 0.0028 μm to 1.9756 μm). Simulation results in COMSOL validated the previous theoretical calculations. Moreover, the transmissivity and 3dB bandwidth of the type-II band were calculated with different structure widths. The maximum transmissivity of ~99% appears at a width of 100 nm, and the minimum 3dB bandwidth reaches 86.35 cm<sup>−1</sup> at a structure width of 1300 nm. When the structure width meets or exceeds 1700 nm, the 3dB bandwidth is equal to 0, and its structure length is the limit for the filter application. These characteristics reveal the excellent filtering characteristics of the dielectric-h-BN-dielectric structure, and reveal the great potential of using the dielectric-h-BN-dielectric structure to design optical filter devices with excellent performance in mid-infrared bands.
topic phonon plaritons
filtering characteristics
h-BN
mid-infrared band
url https://www.mdpi.com/2079-4991/10/5/878
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