Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays

Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to nat...

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Main Authors: Valeria Demontis, Valentina Zannier, Lucia Sorba, Francesco Rossella
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/8/2079
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spelling doaj-048b2a4b074c43d7a19be3197d2b9c312021-08-26T14:09:25ZengMDPI AGNanomaterials2079-49912021-08-01112079207910.3390/nano11082079Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered ArraysValeria Demontis0Valentina Zannier1Lucia Sorba2Francesco Rossella3NEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, ItalyNEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, ItalyNEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, ItalyNEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, ItalyOrdered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.https://www.mdpi.com/2079-4991/11/8/2079semiconductor nanowire ordered arrayssubstrate patterningnanowire metasurfaces
collection DOAJ
language English
format Article
sources DOAJ
author Valeria Demontis
Valentina Zannier
Lucia Sorba
Francesco Rossella
spellingShingle Valeria Demontis
Valentina Zannier
Lucia Sorba
Francesco Rossella
Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays
Nanomaterials
semiconductor nanowire ordered arrays
substrate patterning
nanowire metasurfaces
author_facet Valeria Demontis
Valentina Zannier
Lucia Sorba
Francesco Rossella
author_sort Valeria Demontis
title Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays
title_short Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays
title_full Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays
title_fullStr Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays
title_full_unstemmed Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays
title_sort surface nano-patterning for the bottom-up growth of iii-v semiconductor nanowire ordered arrays
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2021-08-01
description Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.
topic semiconductor nanowire ordered arrays
substrate patterning
nanowire metasurfaces
url https://www.mdpi.com/2079-4991/11/8/2079
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AT luciasorba surfacenanopatterningforthebottomupgrowthofiiivsemiconductornanowireorderedarrays
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