Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays
Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to nat...
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-08-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/11/8/2079 |
id |
doaj-048b2a4b074c43d7a19be3197d2b9c31 |
---|---|
record_format |
Article |
spelling |
doaj-048b2a4b074c43d7a19be3197d2b9c312021-08-26T14:09:25ZengMDPI AGNanomaterials2079-49912021-08-01112079207910.3390/nano11082079Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered ArraysValeria Demontis0Valentina Zannier1Lucia Sorba2Francesco Rossella3NEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, ItalyNEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, ItalyNEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, ItalyNEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, ItalyOrdered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.https://www.mdpi.com/2079-4991/11/8/2079semiconductor nanowire ordered arrayssubstrate patterningnanowire metasurfaces |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Valeria Demontis Valentina Zannier Lucia Sorba Francesco Rossella |
spellingShingle |
Valeria Demontis Valentina Zannier Lucia Sorba Francesco Rossella Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays Nanomaterials semiconductor nanowire ordered arrays substrate patterning nanowire metasurfaces |
author_facet |
Valeria Demontis Valentina Zannier Lucia Sorba Francesco Rossella |
author_sort |
Valeria Demontis |
title |
Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays |
title_short |
Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays |
title_full |
Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays |
title_fullStr |
Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays |
title_full_unstemmed |
Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays |
title_sort |
surface nano-patterning for the bottom-up growth of iii-v semiconductor nanowire ordered arrays |
publisher |
MDPI AG |
series |
Nanomaterials |
issn |
2079-4991 |
publishDate |
2021-08-01 |
description |
Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials. |
topic |
semiconductor nanowire ordered arrays substrate patterning nanowire metasurfaces |
url |
https://www.mdpi.com/2079-4991/11/8/2079 |
work_keys_str_mv |
AT valeriademontis surfacenanopatterningforthebottomupgrowthofiiivsemiconductornanowireorderedarrays AT valentinazannier surfacenanopatterningforthebottomupgrowthofiiivsemiconductornanowireorderedarrays AT luciasorba surfacenanopatterningforthebottomupgrowthofiiivsemiconductornanowireorderedarrays AT francescorossella surfacenanopatterningforthebottomupgrowthofiiivsemiconductornanowireorderedarrays |
_version_ |
1721191056750411776 |