Research progress on terahertz integrated power amplifier

In this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier. According to the kinds of base material in i...

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Main Authors:	Han Jiangan, Cheng Xu
Format:	Article
Language:	zho
Published:	National Computer System Engineering Research Institute of China 2019-07-01
Series:	Dianzi Jishu Yingyong
Subjects:	terahertz integrated circuit power amplifier mmic
Online Access:	http://www.chinaaet.com/article/3000105763

id	doaj-04a1c99c327041798c9db4f5d5a37ddf
record_format	Article
spelling	doaj-04a1c99c327041798c9db4f5d5a37ddf2020-11-25T01:43:54ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982019-07-01457192210.16157/j.issn.0258-7998.1997043000105763Research progress on terahertz integrated power amplifierHan Jiangan0Cheng Xu1Microsystem & Terahertz Research Center，China Academy of Engineering Physics，Chengdu 610299，ChinaMicrosystem & Terahertz Research Center，China Academy of Engineering Physics，Chengdu 610299，ChinaIn this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier. According to the kinds of base material in integrated circuit(IC) design, compound including InP and GaAs terahertz amplifier IC are compared with those made by silicon including bulk CMOS and SiGe. Basing on this category standard by material, the performances of terahertz amplifier IC are analyzed and concluded in the aspects of circuit topology and specifications.http://www.chinaaet.com/article/3000105763terahertzintegrated circuitpower amplifiermmic
collection	DOAJ
language	zho
format	Article
sources	DOAJ
author	Han Jiangan Cheng Xu
spellingShingle	Han Jiangan Cheng Xu Research progress on terahertz integrated power amplifier Dianzi Jishu Yingyong terahertz integrated circuit power amplifier mmic
author_facet	Han Jiangan Cheng Xu
author_sort	Han Jiangan
title	Research progress on terahertz integrated power amplifier
title_short	Research progress on terahertz integrated power amplifier
title_full	Research progress on terahertz integrated power amplifier
title_fullStr	Research progress on terahertz integrated power amplifier
title_full_unstemmed	Research progress on terahertz integrated power amplifier
title_sort	research progress on terahertz integrated power amplifier
publisher	National Computer System Engineering Research Institute of China
series	Dianzi Jishu Yingyong
issn	0258-7998
publishDate	2019-07-01
description	In this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier. According to the kinds of base material in integrated circuit(IC) design, compound including InP and GaAs terahertz amplifier IC are compared with those made by silicon including bulk CMOS and SiGe. Basing on this category standard by material, the performances of terahertz amplifier IC are analyzed and concluded in the aspects of circuit topology and specifications.
topic	terahertz integrated circuit power amplifier mmic
url	http://www.chinaaet.com/article/3000105763
work_keys_str_mv	AT hanjiangan researchprogressonterahertzintegratedpoweramplifier AT chengxu researchprogressonterahertzintegratedpoweramplifier
_version_	1725031008744505344

Research progress on terahertz integrated power amplifier

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