Scalable Electronic Ratchet with Over 10% Rectification Efficiency
Abstract Electronic ratchets use a periodic potential with broken inversion symmetry to rectify undirected (electromagnetic, EM) forces and can in principle be a complement to conventional diode‐based designs. Unfortunately, ratchet devices reported to date have low or undetermined power conversion...
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doaj-04b1fe95b3c2418c8c8baa9b362d83ca2020-11-25T03:48:45ZengWileyAdvanced Science2198-38442020-02-0173n/an/a10.1002/advs.201902428Scalable Electronic Ratchet with Over 10% Rectification EfficiencyOlof Andersson0Joris Maas1Gerwin Gelinck2Martijn Kemerink3Complex Materials and Devices Department of Physics Chemistry and Biology (IFM) Linköping University SE‐581 83 Linköping SwedenHolst Centre/TNO High Tech Campus 31 5656 AE Eindhoven The NetherlandsHolst Centre/TNO High Tech Campus 31 5656 AE Eindhoven The NetherlandsComplex Materials and Devices Department of Physics Chemistry and Biology (IFM) Linköping University SE‐581 83 Linköping SwedenAbstract Electronic ratchets use a periodic potential with broken inversion symmetry to rectify undirected (electromagnetic, EM) forces and can in principle be a complement to conventional diode‐based designs. Unfortunately, ratchet devices reported to date have low or undetermined power conversion efficiencies, hampering applicability. Combining experiments and numerical modeling, field‐effect transistor‐based ratchets are investigated in which the driving signal is coupled into the accumulation layer via interdigitated finger electrodes that are capacitively coupled to the field effect transistor channel region. The output current–voltage curves of these ratchets can have a fill factor >> 0.25 which is highly favorable for the power output. Experimentally, a maximum power conversion efficiency well over 10% at 5 MHz, which is the highest reported value for an electronic ratchet, is determined. Device simulations indicate this number can be increased further by increasing the device asymmetry. A scaling analysis shows that the frequency range of optimal performance can be scaled to the THz regime, and possibly beyond, while adhering to technologically realistic parameters. Concomitantly, the power output density increases from ≈4 W m−2 to ≈1 MW m−2. Hence, this type of ratchet device can rectify high‐frequency EM fields at reasonable efficiencies, potentially paving the way for actual use as energy harvester.https://doi.org/10.1002/advs.201902428field effect transistorsindium–gallium–zinc oxide (IGZO)modelingratchetsrectification |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Olof Andersson Joris Maas Gerwin Gelinck Martijn Kemerink |
spellingShingle |
Olof Andersson Joris Maas Gerwin Gelinck Martijn Kemerink Scalable Electronic Ratchet with Over 10% Rectification Efficiency Advanced Science field effect transistors indium–gallium–zinc oxide (IGZO) modeling ratchets rectification |
author_facet |
Olof Andersson Joris Maas Gerwin Gelinck Martijn Kemerink |
author_sort |
Olof Andersson |
title |
Scalable Electronic Ratchet with Over 10% Rectification Efficiency |
title_short |
Scalable Electronic Ratchet with Over 10% Rectification Efficiency |
title_full |
Scalable Electronic Ratchet with Over 10% Rectification Efficiency |
title_fullStr |
Scalable Electronic Ratchet with Over 10% Rectification Efficiency |
title_full_unstemmed |
Scalable Electronic Ratchet with Over 10% Rectification Efficiency |
title_sort |
scalable electronic ratchet with over 10% rectification efficiency |
publisher |
Wiley |
series |
Advanced Science |
issn |
2198-3844 |
publishDate |
2020-02-01 |
description |
Abstract Electronic ratchets use a periodic potential with broken inversion symmetry to rectify undirected (electromagnetic, EM) forces and can in principle be a complement to conventional diode‐based designs. Unfortunately, ratchet devices reported to date have low or undetermined power conversion efficiencies, hampering applicability. Combining experiments and numerical modeling, field‐effect transistor‐based ratchets are investigated in which the driving signal is coupled into the accumulation layer via interdigitated finger electrodes that are capacitively coupled to the field effect transistor channel region. The output current–voltage curves of these ratchets can have a fill factor >> 0.25 which is highly favorable for the power output. Experimentally, a maximum power conversion efficiency well over 10% at 5 MHz, which is the highest reported value for an electronic ratchet, is determined. Device simulations indicate this number can be increased further by increasing the device asymmetry. A scaling analysis shows that the frequency range of optimal performance can be scaled to the THz regime, and possibly beyond, while adhering to technologically realistic parameters. Concomitantly, the power output density increases from ≈4 W m−2 to ≈1 MW m−2. Hence, this type of ratchet device can rectify high‐frequency EM fields at reasonable efficiencies, potentially paving the way for actual use as energy harvester. |
topic |
field effect transistors indium–gallium–zinc oxide (IGZO) modeling ratchets rectification |
url |
https://doi.org/10.1002/advs.201902428 |
work_keys_str_mv |
AT olofandersson scalableelectronicratchetwithover10rectificationefficiency AT jorismaas scalableelectronicratchetwithover10rectificationefficiency AT gerwingelinck scalableelectronicratchetwithover10rectificationefficiency AT martijnkemerink scalableelectronicratchetwithover10rectificationefficiency |
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