Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

In this paper, a comprehensive evaluation of thermal behavior of the GaN vertical n+-n−-n-n+ Gunn diode have been carried out through simulation method. We explore the complex effects of various parameters on the device thermal performance through a microscopic analysis of electron movemen...

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Bibliographic Details
Main Authors: Ying Wang, Jinping Ao, Shibin Liu, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Applied Sciences
Subjects:
Online Access:http://www.mdpi.com/2076-3417/9/1/75