Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies
In this paper, a comprehensive evaluation of thermal behavior of the GaN vertical n+-n−-n-n+ Gunn diode have been carried out through simulation method. We explore the complex effects of various parameters on the device thermal performance through a microscopic analysis of electron movemen...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-12-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2076-3417/9/1/75 |