A study on photo-thermo-elastic wave in a semi-conductor material caused by ramp-type heating

• Main Authors: Aatef D. Hobiny, Faris S. Alzahrani, Ibrahim A. Abbas
• Format: Article
• Language: English
• Published: Elsevier 2021-04-01
• Series: Alexandria Engineering Journal
• Subjects: GNII model; Laplace-Fourier transforms; Eigenvalues approach; Photo-thermal waves
• Online Access: http://www.sciencedirect.com/science/article/pii/S1110016820306281

A mathematical model of the Green-Naghdi photo-thermoelastic model due to ramp-type heating is presented to study the photo- thermo-elastic waves in a two-dimension semi-conductor material. By using Fourier and Laplace transforms with the eigenvalue scheme, the variables are analytically obtained. A semiconductor media such as silicon is investigated. Numerical outcomes for all the physical quantities are implemented and illustrated graphically. The results show that the ramp-type source has varying degrees of influence on physical quantities. The derived methods are evaluated with numerical outcomes which are applied to the semi-conductor material in simplified geometry. Finally, it can be found that the ramp-type heating source has great effects on the studying fields.