MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES

MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES

The electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap semiconductors while one monomolecular layer of MoS2-...

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Main Authors: A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
molybdenum disulfide
monolayer
electronic structure
band gap
Online Access:https://doklady.bsuir.by/jour/article/view/676
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spelling doaj-08e5a2f324c7404b80b2110bf913f42e2021-07-28T16:19:52ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-010498101675MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONESA. V. Krivosheeva0V. L. Shaposhnikov1V. E. Borisenko2Белорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиThe electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap semiconductors while one monomolecular layer of MoS2- x Tex compounds are transforming into direct-gap compounds for x < 0,5 or x > 1,5. The band gap dependence has a linear behavior in the case when the concentration of Te atoms is smaller than the concentration of S atoms.https://doklady.bsuir.by/jour/article/view/676molybdenum disulfidemonolayerelectronic structureband gap
collection DOAJ
language Russian
format Article
sources DOAJ
author A. V. Krivosheeva
V. L. Shaposhnikov
V. E. Borisenko
spellingShingle A. V. Krivosheeva
V. L. Shaposhnikov
V. E. Borisenko
MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
molybdenum disulfide
monolayer
electronic structure
band gap
author_facet A. V. Krivosheeva
V. L. Shaposhnikov
V. E. Borisenko
author_sort A. V. Krivosheeva
title MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES
title_short MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES
title_full MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES
title_fullStr MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES
title_full_unstemmed MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES
title_sort mos<sub>2</sub> band gap modification upon replacement of sulfur atoms by tellurium ones
publisher Educational institution «Belarusian State University of Informatics and Radioelectronics»
series Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
issn 1729-7648
publishDate 2019-06-01
description The electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap semiconductors while one monomolecular layer of MoS2- x Tex compounds are transforming into direct-gap compounds for x < 0,5 or x > 1,5. The band gap dependence has a linear behavior in the case when the concentration of Te atoms is smaller than the concentration of S atoms.
topic molybdenum disulfide
monolayer
electronic structure
band gap
url https://doklady.bsuir.by/jour/article/view/676
work_keys_str_mv AT avkrivosheeva mossub2subbandgapmodificationuponreplacementofsulfuratomsbytelluriumones
AT vlshaposhnikov mossub2subbandgapmodificationuponreplacementofsulfuratomsbytelluriumones
AT veborisenko mossub2subbandgapmodificationuponreplacementofsulfuratomsbytelluriumones
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