High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype Heterojunctions
Abstract A novel isotype heterojunction ultraviolet photodetector was fabricated by growing n-ZnO nanorod arrays on n-GaN thin films and then spin-coated with graphene quantum dots (GQDs). Exposed to UV illumination with a wavelength of 365 nm, the time-dependent photoresponse of the hybrid detector...
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doaj-0a32d024b93347b28ab143bc28d5aa1c2020-11-25T02:30:41ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-08-011311910.1186/s11671-018-2672-5High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype HeterojunctionsDeshuai Liu0Hui-Jun Li1Jinrao Gao2Shuang Zhao3Yuankun Zhu4Ping Wang5Ding Wang6Aiying Chen7Xianying Wang8Junhe Yang9School of Materials Science and Engineering, University of Shanghai for Science and TechnologySchool of Materials Science and Engineering, University of Shanghai for Science and TechnologySchool of Materials Science and Engineering, University of Shanghai for Science and TechnologySchool of Materials Science and Engineering, University of Shanghai for Science and TechnologySchool of Materials Science and Engineering, University of Shanghai for Science and TechnologySchool of Materials Science and Engineering, University of Shanghai for Science and TechnologySchool of Materials Science and Engineering, University of Shanghai for Science and TechnologySchool of Materials Science and Engineering, University of Shanghai for Science and TechnologySchool of Materials Science and Engineering, University of Shanghai for Science and TechnologySchool of Materials Science and Engineering, University of Shanghai for Science and TechnologyAbstract A novel isotype heterojunction ultraviolet photodetector was fabricated by growing n-ZnO nanorod arrays on n-GaN thin films and then spin-coated with graphene quantum dots (GQDs). Exposed to UV illumination with a wavelength of 365 nm, the time-dependent photoresponse of the hybrid detectors manifests high sensitivity and consistent transients with a rise time of 100 ms and a decay time of 120 ms. Meanwhile, an ultra-high specific detectivity (up to ~ 1012 Jones) and high photoresponsivity (up to 34 mA W−1) are obtained at 10 V bias. Compared to the bare heterojunction detectors, the excellent performance of the GQDs decorated n-ZnO/n-GaN heterostructure is attributed to the efficient immobilization of GQDs on the ZnO nanorod arrays. GQDs were exploited as a light absorber and act like an electron donor to effectively improve the effective carrier concentration in interfacial junction. Moreover, appropriate energy band alignment in GQDs decorated ZnO/GaN hybrids can also be a potential factor in facilitating the UV-induced photocurrent and response speed.http://link.springer.com/article/10.1186/s11671-018-2672-5ZnO nanorod arraysGraphene quantum dotsHeterojunctionUV photodetector |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Deshuai Liu Hui-Jun Li Jinrao Gao Shuang Zhao Yuankun Zhu Ping Wang Ding Wang Aiying Chen Xianying Wang Junhe Yang |
spellingShingle |
Deshuai Liu Hui-Jun Li Jinrao Gao Shuang Zhao Yuankun Zhu Ping Wang Ding Wang Aiying Chen Xianying Wang Junhe Yang High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype Heterojunctions Nanoscale Research Letters ZnO nanorod arrays Graphene quantum dots Heterojunction UV photodetector |
author_facet |
Deshuai Liu Hui-Jun Li Jinrao Gao Shuang Zhao Yuankun Zhu Ping Wang Ding Wang Aiying Chen Xianying Wang Junhe Yang |
author_sort |
Deshuai Liu |
title |
High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype Heterojunctions |
title_short |
High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype Heterojunctions |
title_full |
High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype Heterojunctions |
title_fullStr |
High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype Heterojunctions |
title_full_unstemmed |
High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype Heterojunctions |
title_sort |
high-performance ultraviolet photodetector based on graphene quantum dots decorated zno nanorods/gan film isotype heterojunctions |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1931-7573 1556-276X |
publishDate |
2018-08-01 |
description |
Abstract A novel isotype heterojunction ultraviolet photodetector was fabricated by growing n-ZnO nanorod arrays on n-GaN thin films and then spin-coated with graphene quantum dots (GQDs). Exposed to UV illumination with a wavelength of 365 nm, the time-dependent photoresponse of the hybrid detectors manifests high sensitivity and consistent transients with a rise time of 100 ms and a decay time of 120 ms. Meanwhile, an ultra-high specific detectivity (up to ~ 1012 Jones) and high photoresponsivity (up to 34 mA W−1) are obtained at 10 V bias. Compared to the bare heterojunction detectors, the excellent performance of the GQDs decorated n-ZnO/n-GaN heterostructure is attributed to the efficient immobilization of GQDs on the ZnO nanorod arrays. GQDs were exploited as a light absorber and act like an electron donor to effectively improve the effective carrier concentration in interfacial junction. Moreover, appropriate energy band alignment in GQDs decorated ZnO/GaN hybrids can also be a potential factor in facilitating the UV-induced photocurrent and response speed. |
topic |
ZnO nanorod arrays Graphene quantum dots Heterojunction UV photodetector |
url |
http://link.springer.com/article/10.1186/s11671-018-2672-5 |
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