Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5...

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Bibliographic Details
Main Authors: T. N. Wistisen, U. I. Uggerhøj, U. Wienands, T. W. Markiewicz, R. J. Noble, B. C. Benson, T. Smith, E. Bagli, L. Bandiera, G. Germogli, V. Guidi, A. Mazzolari, R. Holtzapple, S. Tucker
Format: Article
Language:English
Published: American Physical Society 2016-07-01
Series:Physical Review Accelerators and Beams
Online Access:http://doi.org/10.1103/PhysRevAccelBeams.19.071001

Internet

http://doi.org/10.1103/PhysRevAccelBeams.19.071001

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