Comparison of gamma ray effects on EPROMs and E2PROMs

Comparison of gamma ray effects on EPROMs and E2PROMs

This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory (E2PROM) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide t...

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Main Authors: Vujisić Miloš, Stanković Koviljka, Vasić Aleksandra
Format: Article
Language:English
Published: VINCA Institute of Nuclear Sciences 2009-01-01
Series:Nuclear Technology and Radiation Protection
Subjects:
EPROM
E2PROM
gamma rays
radiation hardness
Online Access:http://www.doiserbia.nb.rs/img/doi/1451-3994/2009/1451-39940901061V.pdf
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spelling doaj-0d3a7e24fcba4d97982464ae2a7cd93b2020-11-25T00:04:22ZengVINCA Institute of Nuclear SciencesNuclear Technology and Radiation Protection1451-39942009-01-01241616710.2298/NTRP0901061VComparison of gamma ray effects on EPROMs and E2PROMsVujisić MilošStanković KoviljkaVasić AleksandraThis paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory (E2PROM) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than E2PROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E2PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure. http://www.doiserbia.nb.rs/img/doi/1451-3994/2009/1451-39940901061V.pdfEPROME2PROMgamma raysradiation hardness
collection DOAJ
language English
format Article
sources DOAJ
author Vujisić Miloš
Stanković Koviljka
Vasić Aleksandra
spellingShingle Vujisić Miloš
Stanković Koviljka
Vasić Aleksandra
Comparison of gamma ray effects on EPROMs and E2PROMs
Nuclear Technology and Radiation Protection
EPROM
E2PROM
gamma rays
radiation hardness
author_facet Vujisić Miloš
Stanković Koviljka
Vasić Aleksandra
author_sort Vujisić Miloš
title Comparison of gamma ray effects on EPROMs and E2PROMs
title_short Comparison of gamma ray effects on EPROMs and E2PROMs
title_full Comparison of gamma ray effects on EPROMs and E2PROMs
title_fullStr Comparison of gamma ray effects on EPROMs and E2PROMs
title_full_unstemmed Comparison of gamma ray effects on EPROMs and E2PROMs
title_sort comparison of gamma ray effects on eproms and e2proms
publisher VINCA Institute of Nuclear Sciences
series Nuclear Technology and Radiation Protection
issn 1451-3994
publishDate 2009-01-01
description This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory (E2PROM) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than E2PROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E2PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.
topic EPROM
E2PROM
gamma rays
radiation hardness
url http://www.doiserbia.nb.rs/img/doi/1451-3994/2009/1451-39940901061V.pdf
work_keys_str_mv AT vujisicmilos comparisonofgammarayeffectsonepromsande2proms
AT stankovickoviljka comparisonofgammarayeffectsonepromsande2proms
AT vasicaleksandra comparisonofgammarayeffectsonepromsande2proms
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