Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar In x Ga1−x N/GaN Multiple Quantum Wells

• Main Authors: Cheng-Chang Chen, Hsiang-Ting Lin, Shih-Pang Chang, Hao-Chung Kuo, Hsiao-Wen Hung, Kuo-Hsiang Chien, Yu-Choung Chang, M. H. Shih
• Format: Article
• Language: English
• Published: SpringerOpen 2021-09-01
• Series: Nanoscale Research Letters
• Subjects: GaN; GaN-based LEDs; Photonic quasicrystal multicolor emission; Finite-element method
• Online Access: https://doi.org/10.1186/s11671-021-03576-1

Abstract In this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown In x Ga1−x N/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strong coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.