Rassekh, A., Sallese, J., Jazaeri, F., Fathipour, M., & Ionescu, A. M. (2020). Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect. IEEE.
Chicago Style (17th ed.) CitationRassekh, Amin, Jean-Michel Sallese, Farzan Jazaeri, Morteza Fathipour, and Adrian M. Ionescu. Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect. IEEE, 2020.
MLA (8th ed.) CitationRassekh, Amin, et al. Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect. IEEE, 2020.
Warning: These citations may not always be 100% accurate.