Reliability growth of thin film resistors contact
Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.
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Politehperiodika
2010-10-01
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Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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Online Access: | http://www.tkea.com.ua/tkea/2010/5-6_2010/pdf/03.zip |
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doaj-1021abd3518b45fabc49bf38c6419d982020-11-25T01:42:31ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182010-10-015-61114Reliability growth of thin film resistors contactLugin A. N.Ozemsha M. M.Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.http://www.tkea.com.ua/tkea/2010/5-6_2010/pdf/03.zipcontactthin film resistorcurrent densitydissipation power |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Lugin A. N. Ozemsha M. M. |
spellingShingle |
Lugin A. N. Ozemsha M. M. Reliability growth of thin film resistors contact Tekhnologiya i Konstruirovanie v Elektronnoi Apparature contact thin film resistor current density dissipation power |
author_facet |
Lugin A. N. Ozemsha M. M. |
author_sort |
Lugin A. N. |
title |
Reliability growth of thin film resistors contact |
title_short |
Reliability growth of thin film resistors contact |
title_full |
Reliability growth of thin film resistors contact |
title_fullStr |
Reliability growth of thin film resistors contact |
title_full_unstemmed |
Reliability growth of thin film resistors contact |
title_sort |
reliability growth of thin film resistors contact |
publisher |
Politehperiodika |
series |
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
issn |
2225-5818 |
publishDate |
2010-10-01 |
description |
Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures. |
topic |
contact thin film resistor current density dissipation power |
url |
http://www.tkea.com.ua/tkea/2010/5-6_2010/pdf/03.zip |
work_keys_str_mv |
AT luginan reliabilitygrowthofthinfilmresistorscontact AT ozemshamm reliabilitygrowthofthinfilmresistorscontact |
_version_ |
1725035833745997824 |