1/f noise and carrier transport mechanisms in InSb p + -n junctions
The dark current and 1/f noise spectra have been investigated in p + -n InSb junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates. The current-voltage characteristics have been explained within a model of inhomogeneous p-n junction. The junction inhomogeneities are...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2018-12-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n4_2018/P374-379abstr.html |
| Summary: | The dark current and 1/f noise spectra have been investigated in p + -n InSb junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates. The current-voltage characteristics have been explained within a model of inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise. |
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| ISSN: | 1560-8034 1605-6582 |