Binarized Neural Network with Silicon Nanosheet Synaptic Transistors for Supervised Pattern Classification

Abstract In the biological neural network, the learning process is achieved through massively parallel synaptic connections between neurons that can be adjusted in an analog manner. Recent developments in emerging synaptic devices and their networks can emulate the functionality of a biological neur...

Full description

Bibliographic Details
Main Authors: Sungho Kim, Bongsik Choi, Jinsu Yoon, Yongwoo Lee, Hee-Dong Kim, Min-Ho Kang, Sung-Jin Choi
Format: Article
Language:English
Published: Nature Publishing Group 2019-08-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-019-48048-w
Description
Summary:Abstract In the biological neural network, the learning process is achieved through massively parallel synaptic connections between neurons that can be adjusted in an analog manner. Recent developments in emerging synaptic devices and their networks can emulate the functionality of a biological neural network, which will be the fundamental building block for a neuromorphic computing architecture. However, on-chip implementation of a large-scale artificial neural network is still very challenging due to unreliable analog weight modulation in current synaptic device technology. Here, we demonstrate a binarized neural network (BNN) based on a gate-all-around silicon nanosheet synaptic transistor, where reliable digital-type weight modulation can contribute to improve the sustainability of the entire network. BNN is applied to three proof-of-concept examples: (1) handwritten digit classification (MNIST dataset), (2) face image classification (Yale dataset), and (3) experimental 3 × 3 binary pattern classifications using an integrated synaptic transistor network (total 9 × 9 × 2   162 cells) through a supervised online training procedure. The results consolidate the feasibility of binarized neural networks and pave the way toward building a reliable and large-scale artificial neural network by using more advanced conventional digital device technologies.
ISSN:2045-2322