On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs
This work deals with the assessment of gate dielectric for 4H-SiC MOSFETs using technology based two-dimensional numerical computer simulations. Results are studied for variety of gate dielectric candidates with varying thicknesses using well-known Fowler-Nordheim tunneling model. Compared to conven...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2015-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2015/651527 |